document number: 93551 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 1 standard recovery diodes (stud version), 600 a SD600N/r series vishay semiconductors features ? wide current range ? high voltage ratings up to 3200 v ? high surge current capabilities ? stud cathode and stud anode version ? standard jedec types ? compression bonded encapsulations ?rohs complaint ? lead (pb)-free ? designed and qualified for industrial level typical applications ? converters ? power supplies ? machine tool controls ? high power drives ? medium traction applications electrical specifications product summary i f(av) 600 a b-8 rohs compliant major ratings and characteristics parameter test conditions SD600N/r units 04 to 20 22 to 32 i f(av) 600 a t c 92 54 c i f(rms) 940 a i fsm 50 hz 13 000 10 500 60 hz 13 600 11 000 i 2 t 50 hz 845 551 ka 2 s 60 hz 772 503 v rrm range 400 to 2000 2200 to 3200 v t j - 40 to 180 - 40 to 150 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = t j maximum ma SD600N/r 04 400 500 35 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 22 2200 2300 28 2800 2900 32 3200 3300
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93551 2 revision: 17-apr-08 SD600N/r series vishay semiconductors standard recovery diodes (stud version), 600 a forward conduction parameter symbol test conditions SD600N/r units 04 to 20 22 to 32 maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 600 a 92 54 c 570 375 a 100 c maximum rms forward current i f(rms) dc at t c = 75 c (04 to 20), t c = 36 c (25 to 32) 940 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 13 000 10 500 t = 8.3 ms 13 600 11 000 t = 10 ms 100 % v rrm reapplied 10 900 8830 t = 8.3 ms 11 450 9250 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 845 551 ka 2 s t = 8.3 ms 772 503 t = 10 ms 100 % v rrm reapplied 598 390 t = 8.3 ms 546 356 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 8450 5510 ka 2 ? s low level value of threshold voltage v f(to)1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 0.78 0.84 v high level value of threshold voltage v f(to)2 (i > ? x i f(av) ), t j = t j maximum 0.87 0.88 low level value of forward slope resistance r f1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 0.35 0.40 m ? high level value of forward slope resistance r f2 (i > ? x i f(av) ), t j = t j maximum 0.31 0.38 maximum forward voltage drop v fm i pk = 1500 a, t j = t j maximum, t p = 10 ms sinusoidal wave 1.31 1.44 v thermal and mechanical specifications parameter symbol test conditions SD600N/r units 04 to 20 22 to 32 maximum junction operating temperature range t j - 40 to 180 - 40 to 150 c maximum storage temperature range t stg - 55 to 200 maximum thermal resistance, junction to case r thjc dc operation 0.1 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.04 maximum allowed mounting torque 10 % not-lubricated threads 50 nm approximate weight 454 g case style see dimensions (lin k at the end of datasheet) b-8
document number: 93551 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 3 SD600N/r series standard recovery diodes (stud version), 600 a vishay semiconductors note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics ? r thjc conduction conduction angle sinusoidal conduction rec tangular conduction test conditions units 180 0.012 0.008 t j = t j maximum k/w 120 0.014 0.014 90 0.017 0.019 60 0.025 0.026 30 0.042 0.042 80 90 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 600 700 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) r (dc) = 0.1 k/ w thjc SD600N/ r se ries (400v t o 2000v) 70 80 90 100 110 120 130 140 150 160 170 180 0 200 400 600 800 1000 30 60 90 180 dc 120 average forward current (a) conduction period maximum allowable case temperature (c) r (dc) = 0.1 k/ w thjc SD600N/ r series (400v t o 2000v) 50 60 70 80 90 100 110 120 130 140 150 0 100 200 300 400 500 600 700 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) SD600N/ r se rie s (2500v to 3200v) r (dc) = 0.1 k/ w thjc 30 40 50 60 70 80 90 100 110 120 130 140 150 0 200 400 600 800 1000 30 60 90 180 dc 120 average forward current (a) conduction period maximum allowable case temperature (c) sd 6 0 0 n / r se r i e s ( 2 5 0 0 v t o 3 2 0 0 v ) r (dc) = 0.1 k/ w thjc
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93551 4 revision: 17-apr-08 SD600N/r series vishay semiconductors standard recovery diodes (stud version), 600 a fig. 5 - forward powe r loss characteristics fig. 6 - forward power loss characteristics fig. 7 - forward power loss characteristics 20 40 60 80 100 120 140 160 180 maximum allowable ambient temperature (c) 1 k / w r = 0 . 0 2 k / w - d e l t a r t h s a 0 . 0 4 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 2 k / w 0 . 4 k / w 0 . 6 k / w 1 . 8 k / w 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 180 120 90 60 30 rm s li m i t conduction angle maximum average forward power loss (w) average forward current (a) SD600N/ r series (400v to 2000v) t = 180c j 20 40 60 80 100 120 140 160 180 maximum allowable ambient temperature (c) 1 k / w r = 0 . 0 2k / w - d e l t a r t h s a 0 . 0 4 k / w 0 . 0 8 k / w 0 . 1k / w 0 . 2 k / w 0 . 4 k / w 0 . 6 k / w 1 . 8 k / w 0 100 200 300 400 500 600 700 800 900 1000 1100 0 200 400 600 800 1000 dc 180 120 90 60 30 rm s li m i t conduction period maximum average forward power loss (w) average forward current (a) SD600N/ r se rie s (400v t o 2000v) t = 180c j 25 50 75 100 125 150 maximum allowable ambient temperature (c) 1 k / w r = 0 . 0 2 k / w - d e l t a r t h s a 0 . 0 4 k / w 0 . 06 k / w 0 . 1 k / w 0 . 2 k / w 0 . 4 k / w 0 100 200 300 400 500 600 700 800 900 0 100 200 300 400 500 600 180 120 90 60 30 rm s li m i t conduction angle maximum average forward power loss (w) average forward current (a) SD600N/ r se rie s (2500v to 3200v) t = 150c j
document number: 93551 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 5 SD600N/r series standard recovery diodes (stud version), 600 a vishay semiconductors fig. 8 - forward powe r loss characteristics fig. 9 - maximum non-repetitive surge current fig. 10 - maximum non-repetitive surge current fig. 11 - maximum non-repetitive surge current fig. 12 - maximum non- repetitive surge current 25 50 75 100 125 150 maximum allowable ambient temperature (c) 1 k / w r = 0 . 0 2 k / w - d e l t a r t h s a 0 . 0 4 k / w 0 . 0 6 k / w 0 . 1 k / w 0 . 2 k / w 0 . 4 k / w 0 100 200 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 800 900 dc 180 120 90 60 30 rm s li m i t conduction period maximum average forward power loss (w) average forward current (a) SD600N/ r series (2500v to 3200v) t = 150c j 2000 4000 6000 8000 10000 12000 110100 number of equal amplitude ha lf cyc le current pulses (n) peak half sine wave forward current (a) at any rated load condition and with rated v applied following surge. rrm initia l t = 180c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j SD600N/ r series (400v to 2000v) 2000 4000 6000 8000 10000 12000 14000 0.01 0.1 1 pulse train duration (s) pe a k ha lf sin e wa v e fo rw a rd c u rre n t ( a) maximum non repetitive surge current versus pulse train duration. init ia l t = 180 c no voltage reapplied rated v reapplied rrm j sd 6 0 0 n / r se r i e s (400v to 2000v) 2000 4000 6000 8000 10000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) initia l t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j sd 6 0 0 n / r se r i e s (2500v to 3200v) at any rated load condition and with rated v applied following surge. rrm 2000 4000 6000 8000 10000 12000 0.01 0.1 1 pulse train duration (s) peak half sine wave forward current (a) initia l t = 150 c no voltage reapplied rated v reapplied j rrm versus pulse train duration. sd 6 0 0 n / r se r i e s (2500v to 3200v) ma ximum non re p et it ive surg e curre nt
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93551 6 revision: 17-apr-08 SD600N/r series vishay semiconductors standard recovery diodes (stud version), 600 a fig. 13 - forward voltage drop characteristic s fig. 14 - forward voltage drop characteristics fig. 15 - thermal impedance z thjc characteristics 100 1000 10000 01234 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 1 8 0 c j sd 6 0 0 n / r se r i e s (400v to 2000v) 100 1000 10000 012345 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 150c j sd 6 0 0 n / r se r i e s (2500v to 3200v) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st e a d y st a t e v a l u e : r = 0.1 k/ w (dc operation) thjc sd 6 0 0 n / r se r i e s
document number: 93551 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 7 SD600N/r series standard recovery diodes (stud version), 600 a vishay semiconductors ordering information table device code 5 13 24 67 sd 60 0 n 32 p c 1 - diode 2 - essential part number 3 - 0 = standard recovery 4 - n = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base b-8 3/4" 16unf-2a 7 - c = ceramic cap for metric device m24 x 1.5 contact factory links to related documents dimensions http://www.vishay.com/doc?95303
document number: 95303 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-apr-08 1 b-8 outline dimensions vishay semiconductors dimensions in millimeters (inches) 26 (1.023) max. 10.5 (0.41) dia. 5 (0.20) 0.3 (0.01) 12 (0.47) min. 27.5 (1.08) max. 38 (1.5) dia. max. ceramic housing sw 45 c.s. 70 mm 2 21 (0.83) max. 3/4"-16unf-2a * 115 (4.52) min. 245 (9.645) 255 (10.04) 80 (3.15) max. 47 (1.85) max. *for metric device: m24 x 1.5 - length 21 (0.83) max. contact factory
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